AOD7S65/aou7s65/aoi7s65 650v 7a a aa a mos tm power transistor general description product summary v ds @ t j,max 750v i dm 30a r ds(on),max 0.65 w q g,typ 9.2nc e oss @ 400v 2 m j 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt t j , t stg t l symbol r q ja r q cs r q jc t c =100c pulsed drain current c continuous drain current single pulsed avalanche energy h w 43 p d repetitive avalanche energy c mj t c =25c i d avalanche current c a 1.7 30 gate-source voltage va the AOD7S65 & aou7s65 & aoi7s65 have been fabricated using the advanced a mos tm high voltage process that is designed to deliver high levels of performance and robustness in switching application s. by providing low r ds(on) , q g and e oss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage 650 maximum c/w w/ o c c thermal characteristics -- 0.5 c/w maximum junction-to-case d,f 1.1 1.4 c/w derate above 25 o c parameter typical -55 to 150 maximum 100 0.7 20 units v/ns c 75 89 86 30 mj t c =25c maximum case-to-sink a maximum junction-to-ambient a,d 300 45 55 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds k junction and storage temperature range dv/dt power dissipation b g ds g s d g s d top view to252 dpak bottom view top view to251 bottom view AOD7S65 aou7s65 g g s d s d g g d d s s top view bottom view to251a ipak aoi7s65 rev1: nov 2012 www.aosmd.com page 1 of 7
AOD7S65/aou7s65/aoi7s65 symbol min typ max units 650 - - 700 750 - - - 1 - 10 - i gss gate-body leakage current - - 100 n a v gs(th) gate threshold voltage 2.6 3.3 4 v - 0.54 0.65 w - 1.48 1.64 w v sd - 0.82 - v i s maximum body-diode continuous current - - 7 a i sm - - 30 a c iss - 434 - pf c oss - 30 - pf c o(er) - 23 - pf c o(tr) - 80 - pf c rss - 1 - pf r g - 17.5 - w q g - 9.2 - nc q gs - 2.5 - nc q gd - 2.7 - nc t d(on) - 21 - ns t r - 14 - ns t d(off) - 55 - ns t f - 15 - ns t rr - 224 - ns i rm - 19 - a q rr - 2.8 - m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-off delaytime v gs =10v, v ds =400v, i d =3.5a, r g =25 w turn-off fall time turn-on delaytime body diode reverse recovery charge i f =3.5a,di/dt=100a/ m s,v ds =400v peak reverse recovery current body diode reverse recovery time turn-on rise time switching parameters effective output capacitance, energy related i vgs=0v, v ds =0 to 480v, f=1mhz reverse transfer capacitance v gs =0v, v ds =0v, f=1mhz gate source charge gate drain charge v gs =10v, i d =3.5a, t j =25c diode forward voltage maximum body-diode pulsed current c i f =3.5a,di/dt=100a/ m s,v ds =400v i f =3.5a,di/dt=100a/ m s,v ds =400v vgs=0v, v ds =100v, f=1mhz effective output capacitance, time related j total gate charge v gs =10v, v ds =480v, i d =3.5a dynamic parameters i s =3.5a,v gs =0v, t j =25c gate resistance v gs =10v, i d =3.5a, t j =150c input capacitance v gs =0v, v ds =100v, f=1mhz output capacitance i dss bv dss r ds(on) static drain-source on-resistance v ds =5v,i d =250 m a drain-source breakdown voltage m a v ds =650v, v gs =0v i d =250 a, v gs =0v, t j =25c v ds =0v, v gs =30v v ds =520v, t j =150c zero gate voltage drain current i d =250 a, v gs =0v, t j =150c v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions a. the value of r q ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is use d. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. h. l=60mh, i as =1.7a, v dd =150v, starting t j =25c i. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. j. c o(tr) is a fixed capacitance that gives the same chargin g time as c oss while v ds is rising from 0 to 80% v (br)dss. k. wave soldering only allowed at leads. rev1: nov 2012 www.aosmd.com page 2 of 7
AOD7S65/aou7s65/aoi7s65 typical electrical and thermal characteristics 0 2 4 6 8 10 12 14 0 4 8 12 16 20 v ds (volts) figure 1: on-region characteristics@25c i d (a) v gs =4.5v 6v 10v 7v 0.01 0.1 1 10 100 2 4 6 8 10 v gs (volts) figure 3: transfer characteristics i d (a) -55c v ds =20v 25c 125c 0.0 0.3 0.6 0.9 1.2 1.5 0 3 6 9 12 15 i d (a) figure 4: on-resistance vs. drain current and gate voltage r ds(on) ( w ww w ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 5: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =3.5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 6: break down vs. junction temperature bv dss (normalized) 0 2 4 6 8 10 12 0 4 8 12 16 20 v ds (volts) figure 2: on-region characteristics@125c i d (a) v gs =4.5v 5v 10v 6v 7v 5v 5.5v 5.5v rev1: nov 2012 www.aosmd.com page 3 of 7
AOD7S65/aou7s65/aoi7s65 typical electrical and thermal characteristics 0 3 6 9 12 15 0 2 4 6 8 10 12 q g (nc) figure 8: gate-charge characteristics v gs (volts) v ds =480v i d =3.5a 0 1 10 100 1000 10000 0 100 200 300 400 500 600 v ds (volts) figure 9: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 11: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 7: body-diode characteristics (note e) i s (a) 25c 125c 0 1 2 3 4 5 0 100 200 300 400 500 600 v ds (volts) figure 10: coss stored energy eoss(uj) e oss 0 200 400 600 800 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 12: single pulse power rating junction-to- case (note f) power (w) t j(max) =150c t c =25c rev1: nov 2012 www.aosmd.com page 4 of 7
AOD7S65/aou7s65/aoi7s65 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 13: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =1.4c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0 2 4 6 8 0 25 50 75 100 125 150 t case (c) figure 15: current de-rating (note b) current rating i d (a) 0 20 40 60 80 100 25 50 75 100 125 150 175 t case (c) figure 14: avalanche energy e as (mj) t on t p d rev1: nov 2012 www.aosmd.com page 5 of 7
AOD7S65/aou7s65/aoi7s65 typical electrical and thermal characteristics 0 100 200 300 400 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: single pulse power rating junction-to-am bient (note g) power (w) t a =25c 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 10000 pulse width (s) figure 17: normalized maximum transient thermal imp edance (note g) z q qq q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =55c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev1: nov 2012 www.aosmd.com page 6 of 7
AOD7S65/aou7s65/aoi7s65 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev1: nov 2012 www.aosmd.com page 7 of 7
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